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本文提出了一种化学键合方法,它能将光敏染料直接键合在抛光的单晶硅表面。对由该方法得到的键合有菁染料及碳菁染料的硅片,进行了激光Raman光谱及XPS谱分析,结果表明,这两种染料通过硅氮键共价键合于硅片表面。实验发现,由键合有染料的n型硅片制成的In染料n-Si多层结构器件具有光生伏特效应,其光谱响应曲线出现了与染料的最大吸收相对应的吸收峰。
This paper presents a chemical bonding method that binds the dye directly to the polished silicon surface. Laser Raman spectroscopy and XPS spectrum analysis of the silicon wafer bonded with the cyanine dye and the cyanine dye obtained by the method showed that the two dyes were covalently bonded to the surface of the silicon wafer through silicon nitrogen bonds. It was found that the In-dye n-Si multi-layer structure made of dye-bonded n-type wafers has a photo-voltaic effect and its spectral response curve shows an absorption peak corresponding to the maximum absorption of the dye.