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We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer(Agilent B1500A),and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope(CAFM).The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state(LRS) and high resistance state(HRS) can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.
We demonstrate the polarization of resistive switching for a Cu / VOx / Cu memory cell. The switching behaviors of Cu / VOx / Cu cells are tested by using a semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of IV characteristics of VOx / Cu is characterized by using a conductive atomic force microscope (CAFM). The IV test results indicate that both both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage. Cu / VOx / Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.