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研制了用于直播卫星接收机中单级和两级12GHz频段的GaAs低噪声放大器。单级放大器在11.7～12.7GHz带内提供小于2.5dB的噪声系数,大于9.5dB的相关增益,在此频带中两级放大器噪声小于2.8dB,相关增益大于16dB,为了获得低噪声而又不降低可重复性,在此放大器中采用了具有离子注入有源层的0.5μm短距离栅电极(CSE)FET,单级放大器芯片尺寸为1×O.9mm,两级放大器的芯片尺寸为1.5×0.9mm。
A GaAs LNA has been developed for single-stage and two-stage 12GHz frequency bands in direct broadcast satellite receivers. The single-stage amplifier provides a noise figure of less than 2.5 dB in the 11.7 to 12.7 GHz band with a correlation gain of greater than 9.5 dB in which the two-stage amplifier noise is less than 2.8 dB and the associated gain is greater than 16 dB, in order to obtain low noise without degradation Repeatability. In this amplifier, a 0.5 μm short-distance gate electrode (CSE) FET with an ion-implantation active layer was used. The single-stage amplifier chip size was 1 × 0.9 mm and the two-stage amplifier chip size was 1.5 × 0.9 mm.