以4H-SiC(0001)面Si面为加工对象,提出了一种可以快速获得平整、无损伤表面的化学机械抛光方法。先在复合铜、锡盘上对2英寸(1英寸=2.54 cm)的SiC晶片进行机械抛光,去除研磨造成的损伤层和划痕,最后用特殊的抛光液进行化学机械抛光。用微分干涉显微镜和原子力显微镜观察晶片表面形貌的变化,观察结果显示,经3 h抛光后晶片的表面粗糙度状况得到了明显的改善,表面没有观察到划痕,表面粗糙度值达到了0.1 nm以下,并且出现规则排列的原子台阶构型,达到了原子级平整。实验研究了抛光液组成对抛光效果的影响,在最优的条件下,化学机械抛光的去除速率约为387 nm/h。 With 4H-SiC (0001) Si surface as the processing object, a chemical mechanical polishing method that can quickly obtain flat and non-destructive surface was proposed. First, a 2-inch (1 inch = 2.54 cm) SiC wafer was mechanically polished on a composite copper and tin plate to remove damaged layers and scratches caused by grinding and finally subjected to chemical-mechanical polishing with a special polishing solution. The surface morphology of wafers was observed by differential interference microscopy and atomic force microscopy. The results showed that the surface roughness of wafers after 3 h polishing was significantly improved, no scratches were observed on the wafers, and the surface roughness reached 0.1 nm or less, and the regular arrangement of atomic step configuration, to the atomic level formation. The effect of polishing liquid composition on the polishing effect was experimentally studied. Under optimal conditions, the removal rate of chemical mechanical polishing was about 387 nm / h.