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半导体激光器阵列(LDA)封装过程中引入的应力是影响器件阈值电流、光束特性和寿命的重要因素,需要一种简单有效的测试半导体激光器阵列应力的方法评估检测器件封装的质量。分析了应力改变电荧光偏振度(DOP)的一系列理论机制,并通过对条形激光器阵列在荧光条件下偏振特性的测量,研究了几种不同封装形式的条形激光器阵列的荧光偏振度随外加应力的变化性质。实验表明,半导体激光器阵列的偏振特性随驱动电流的增加变化明显,尤其是在阈值电流附近,偏振特性急剧变化。当有局部外力作用器件时,器件的荧光偏振度分布明显变化。通过对多个不同材料封装器件的荧光偏振度测试比较,发现不同的材料和封装形式对管芯引入的封装应力有明显的差别。
The stress introduced in the semiconductor laser array (LDA) packaging process is an important factor that affects the threshold current, the beam characteristics and the lifetime of the device. A simple and effective method for testing the stress of the semiconductor laser array is required to evaluate the quality of the device package. A series of theoretical mechanisms for changing the polarization degree of electric fluorescence (DOP) by stress were analyzed. Fluorescence polarization degree of several kinds of strip-shaped laser arrays were studied by measuring the polarization characteristics of the stripe laser array under fluorescence conditions The nature of the applied stress. Experiments show that the polarization characteristics of the semiconductor laser array with the drive current increases significantly changes, especially in the vicinity of the threshold current, the sharp changes in the polarization characteristics. When there is a local external force device, the device’s fluorescence polarization distribution changes significantly. Through the comparison of the fluorescence polarization degree of a plurality of different material package devices, it is found that different materials and package forms have obvious difference on the package stress introduced by the die.