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在77 K下,0—30 kbar 静压范围内研究了 GaAs/AlAs超短周期超晶格的静压光致发光.测得(GaAs)_1/(AlAs)_1的光致发光峰的压力系数为-1.35 meV/kbar。表明它的导带最低能级具有体材料X谷的特性而不是大多数理论计算所预计的L谷特性.测得(GaAs)_2/(AlAs)_1的光致发光峰的压力系数是8.69meV/kbar.表明它是 GaAs/AlAs超晶格中周期最短的Ⅰ类超晶格.
The static pressure photoluminescence of GaAs / AlAs ultrashort-period superlattices was studied at 77 K under the static pressure range of 0-30 kbar. The pressure coefficient of photoluminescence peak of (GaAs) _1 / (AlAs) _1 -1.35 meV / kbar. Indicating that the lowest band of conduction band has the characteristic of bulk material X valley rather than the L valley characteristic predicted by most theoretical calculations.The pressure coefficient of photoluminescence peak of (GaAs) _2 / (AlAs) _1 is 8.69 meV / kbar. It shows that it is the shortest type I superlattice in GaAs / AlAs superlattices.