This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET.The models mainly include the analytical equations of the surface potential,surface electric field and threshold voltage,which are derived by solving two dimensional Poisson equation in strained-Si layer.The models are verified by numerical simulation.Besides offering the physical insight into device physics in the model,the new structure also provides the basic designing guidance for further immunity of short channel effect and draininduced barrier-lowering of CMOS-based devices in nanometre scale. This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. These models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besid offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and draininduced barrier-lowering of CMOS-based devices in nanometer scale.