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为了提高聚3-十二烷基噻吩的场效应迁移率,将硅纳米线混入聚3-十二烷基噻吩的溶液中制成薄膜.退火后的聚3-十二烷基噻吩能够自组装成有序的微晶结构,有利于电子传输.聚3-十二烷基噻吩薄膜在场效应晶体管中能够获得0.015 cm2·V~(-1)·s~(-1)的迁移率,而混合薄膜能够获得高达0.68 cm2·V~(-1)·s~(-1)的迁移率.这是因为硅纳米线优异的电子传输性能使得电子通过硅纳米线就像通过快速通道一样,从而能够缩短电子在场效应晶体管中的传输时间,提高传输速度.此外,使用离子胶作为介电层也能够提升场效应晶体管的性能,混合薄膜能够获得高达6.2 cm2·V~(-1)·s~(-1)的迁移率.
In order to improve the field-effect mobility of poly (3-dodecylthiophene), a thin film was prepared by mixing silicon nanowires into a solution of poly (3-dodecylthiophene). The annealed poly 3-dodecylthiophene was self-assembled Into an ordered microcrystalline structure, which is conducive to the electron transport.Poly (3-dodecylthiophene) thin film can obtain the mobility of 0.015 cm2 · V -1 · s -1 in the field-effect transistor, The thin film can get the mobility of up to 0.68 cm2 · V -1 s -1 because the excellent electron transport property of silicon nanowires makes the electrons pass through the silicon nanowires just like the fast channel, Shorten the electron transfer time in the field effect transistor and improve the transmission speed.In addition, the use of ion glue as the dielectric layer can also improve the performance of the field effect transistor, the hybrid film can obtain up to 6.2 cm2 · V -1 · s ~ (- -1) mobility.