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系统地研究了射频磁控反应溅射中工艺参数对ＧｅＸＣ１－Ｘ薄膜沉积速率的影响。结果表明，当气体流量比超过某值后，沉积速率有较大的下降。沉积速率随射频功率的增大而增大。某工作气压下有沉积速率的最大值。薄膜厚度随时间的增长规律在出现靶中毒及未出现靶中毒的情况下略有差别。
The influence of process parameters on the deposition rate of GeXC1-X thin films was systematically investigated. The results show that when the gas flow rate exceeds a certain value, the deposition rate is greatly reduced. The deposition rate increases with RF power. A working pressure under the maximum deposition rate. The law of growth of film thickness over time is slightly different in the presence of target poisoning and in the absence of target poisoning.