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我们用CWCO_2激光对注B~+硅片从背面进行辐照,注入的样品受到激光退火的同时,在背面附近的体内引入了大量的晶格损伤.这些损伤可以作为有害杂质的非本征吸杂源.
We use CWCO_2 laser to irradiate the B ~ + silicon wafer from the backside, the injected samples are laser annealed and a large amount of lattice damage is introduced into the body near the backside.These damage can be used as the extrinsic absorption of harmful impurities Miscellaneous sources.