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Cu ion implantation and subsequent rapid annealing at 500℃in N_2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm~2 V~(-1)S~(-1)for microcrystalline diamond(MCD)films.Its electrical field emission behavior can be turned on at E_0=2.6 V/μm,attaining a current density of 19.5μA/cm~2 at an applied field of 3.5 V/μm.Field emission scanning electron microscopy combined with Raman and x-ray photoelectron microscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films,forming conduction channels for electron transportation.
Cu ion implantation and subsequent rapid annealing at 500 ℃ in N_2 result in low surface resistivity of 1.611 ohm / sq with high mobility of 290 cm ~ 2 V -1 for microcrystalline diamond (MCD) films. Its electrical field emission behavior can be turned on at E_0 = 2.6 V / μm, attaining a current density of 19.5 μA / cm ~ 2 at an applied field of 3.5 V / μm. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron microscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder / aC phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.