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设计了一种用于3～5 GHz MB-OFDM超宽带接收机射频前端的CMOS低噪声放大器(LNA)。分析了RC电阻反馈式低噪声放大器的结构,针对其存在的噪声大、增益低等问题,提出一种改进电路结构;增加了一个源极电感,以克服上述电路的不足。采用TSMC 0.18μm RFCMOS工艺,进行设计和仿真。仿真结果表明:改进结构在保证良好的输入输出匹配和较好线性度的前提下,提高了电路的噪声性能,在整个频带范围内,噪声系数小于1.9 dB;同时,增益也达到11 dB左右。
A CMOS low noise amplifier (LNA) was designed for the RF front-end of the MB-OFDM ultra-wideband receiver in 3 ~ 5 GHz. The structure of RC resistance feedback low noise amplifier is analyzed. Aiming at the problems of high noise and low gain, an improved circuit structure is proposed. A source inductance is added to overcome the shortcomings of the above circuit. Design and simulation using TSMC 0.18μm RFCMOS process. The simulation results show that the improved structure can improve the noise performance of the circuit under the premise of ensuring good input and output matching and good linearity. The noise figure is less than 1.9 dB over the entire frequency band. At the same time, the gain is about 11 dB.