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基于0.18μm SiGe BiCMOS工艺,设计了一种高增益单端3级级联60GHz低噪声放大器。级间匹配采用LC谐振,以减小传输损耗,引入的级间电感L与上级输出寄生电容、下级输入寄生电容谐振,以减小寄生效应的影响。在3.3V供电电压下,60GHz频率处的功率增益S_(21)达到21.8dB,噪声系数NF为6.1dB;在58~65GHz频段内,输入和输出反射系数S_(11)和S_(22)均小于-10dB。
Based on the 0.18μm SiGe BiCMOS process, a high-gain, single-ended, cascaded, 60GHz low-noise amplifier is designed. The LC match is adopted between the levels to reduce the transmission loss. The introduced interstage inductance L resonates with the parasitic output capacitance of the upper stage and the parasitic capacitance of the lower stage to reduce the influence of the parasitic effect. At the supply voltage of 3.3V, the power gain S_ (21) at 60GHz reaches 21.8dB and the noise figure NF is 6.1dB. In the frequency range of 58 ~ 65GHz, the input and output reflection coefficients S_ (11) and S_ (22) Less than -10dB.