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极紫外光刻技术(EUVL)是以波长为11-14nm 的软 X 射线为曝光光源的微电子光刻技术。根据目前的光刻技术发展形势看,EUVL 将是大批量生产特征尺寸为70nm 及更细线宽集成电路的主
Ultraviolet Lithography (EUVL) is a microelectronic lithography technique using soft X-ray at 11-14 nm as exposure light source. According to the current situation of lithography technology development, EUVL will be a mass-produced master with feature size of 70nm and finer wire width integrated circuits