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多孔硅的室温可见光发射现象报道迄今已3年有余,Canham和Lehamm分别提出了光发射的量子限制模型,来解释多孔硅的光致发光现象.我们前期工作中发现的多孔硅的荧光峰值能量随HF酸浓度变化的“台阶”行为,有力地支持了量子限制模型.但对于荧光强度的变化和一些与表面后处理有关的实验事实,仅用量子限制模型则不能给出令人满意的回答.关于多孔硅光致发光的机制仍是一个争论的问题.
At room temperature visible light emission of porous silicon has been reported for more than 3 years, Canham and Lehamm respectively proposed a quantum confinement model of light emission to explain the photoluminescence of porous silicon. The fluorescence peak energy of porous silicon found in our previous work The “step” behavior of HF acid concentration strongly supports the quantum confinement model, but for the change of fluorescence intensity and some experimental facts related to surface reprocessing, only the quantum confinement model can not give a satisfactory answer. The mechanism of porous silicon photoluminescence remains a matter of debate.