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  5. ,Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-

,Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-

来源 :中国物理（英文版） | 被引量 : 0次 | 上传用户：wangsong1008
【摘 要】
：
Terbium-doped Zn2SiO4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solidphase reaction method of ZnO and SiO2. X-ray diffra
【作 者】
：
Ji Zhen-Guo Zhao Shi-Chao Xiang Yin Song Yong-Liang Ye Zhi-Zhen 
【机 构】
：
State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China
【出 处】
：
中国物理（英文版）
【发表日期】
：
2004年4期
【关键词】
：
zinc silicate sol-gel solid-phase reaction photoluminescence 
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Terbium-doped Zn2SiO4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solidphase reaction method of ZnO and SiO2. X-ray diffraction (XRD) and UV-Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn2SiO4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn2SiO4 films showed two strong emission bands at 490and 545nm. The photoluminescence lifetime was 4.6ms.
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