本文推导出具有短沟道长度的结栅场效应晶体管的两段模型。在此模型中,导电沟道分为源段和漏段。在源段假设包含有热电子效应修正项的渐变沟道近似。对于漏段,用公式阐述了和过剩载流子堆积效应有关的饱和速度传输。给出了归一化设计曲线和两个样品器件的特性。 In this paper, a two-stage model of junction gate field effect transistor with short channel length is deduced. In this model, the conductive channel is divided into the source and drain segments. At the source it is assumed that the gradient channel approximation contains hot electron effect correction terms. For the leaky section, formulate the saturated velocity transfer related to the excess carrier stacking effect. The characteristics of the normalized design curve and two sample devices are given.