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先进的单元结构和寿命控制技术已同时增强了功率MOSFET的导通电阻和反向恢复性能。本文介绍一种新开发的平面MOSFET—UniFETTM Ⅱ MOSFET—具有显著提高的体二极管特性,另外还介绍了其性能和效率。根据寿命控制的集中程度,UniFET Ⅱ MOSFET可分为普通FET、FRFET和Ultra FRFET MOSFET,其反向恢复时间分别为传统MOSFET的70%、25%和15%左右。为了验证全新MOSFET的性能和效率,用带混频逆变器的150W HID灯镇流器进行了实验。结果证明,两个UniFET Ⅱ MOSFET可取代两个传统MOSFE和四个附加FRD,并且无MOSFET故障。
Advanced cell structure and life control technology has also enhanced the power MOSFET on-resistance and reverse recovery performance. This article describes a newly developed planar MOSFET-UniFETTM II MOSFET-with significantly improved body diode characteristics, along with its performance and efficiency. UniFET II MOSFETs can be divided into common FETs, FRFETs, and Ultra-FRFET MOSFETs with reverse recovery times of about 70%, 25% and 15% of traditional MOSFETs, respectively, based on the degree of lifetime control. In order to verify the performance and efficiency of the new MOSFET, an experiment was conducted with a 150W HID lamp ballast with a frequency mixer. The results demonstrate that two UniFET II MOSFETs can replace two traditional MOSFEs and four additional FRDs and have no MOSFET failure.