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用MOCVD方法生长了n＋－InP/n－InP/SI－InP材料，以HfO2为介质膜，用电子束蒸发和选择化学腐蚀研制成栅宽0.002mm、栅长为0.2mm的具有蘑菇状栅极结构的InPMISFET。直流特性测量表明，跨导gm=80－115ms/mm，开启电压VT－3.62V，沟道的有效电子迁移率ueff=674cm2/V·S，界面态密度NSS=9.56×1011cm－2。设计计算的特征频率fT97.1GHz，最高特征频率fmax64.7GHz，尚未发现器件性能的漂移现象。本器件可作为InP基的单片光电子集成器件(OEIC)的放大部分。
An n + -InP / n-InP / SI-InP material was grown by the MOCVD method. HfO2 was used as a dielectric film. Electron beam evaporation and selective chemical etching were used to fabricate a gate electrode with a gate width of 0.002 mm and a gate length of 0.2 mm. Structure of the InPMISFET. The DC characteristic measurements show that the transconductance gm = 80-115ms / mm, the turn-on voltage VT≈-3.62V, the effective electron mobility of the channel ueff = 674cm2 / V · S and the interface state density NSS = 9.56 × 1011cm-2. Design and calculation of the characteristic frequency fT 97.1GHz, the highest characteristic frequency fmax 64.7GHz, no device performance drift has not been found. This device can be used as an enlarged part of an InP based monolithic optoelectronic integrated device (OEIC).