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为了控制MOST的阈值电压和减小DIBL效应 ,必须对MOST的沟道进行离子注入。这种非均匀掺杂衬底MOST特性的最常用分析方法是数值模拟 ,但这种方法计算量大 ,不能得到解析模型 ,不适用于电路模拟设计。本文所提出的解析模型与SPICEMOS3模型形式相似 ,但其所有参数都是数值模拟的解析公式。新模型将数值分析与解析方法结合起来 ,具有精度高 ,概念清晰 ,计算量小等优点 ,适用于电路分析程序。
In order to control the threshold voltage of MOST and reduce the DIBL effect, the channel of MOST must be ion implanted. The most commonly used method for analyzing the MOST characteristics of this heterogeneous doping substrate is numerical simulation. However, this method is computationally intensive and can not be solved analytically. It is not suitable for circuit simulation design. The analytical model proposed in this paper is similar to the SPICEMOS3 model, but all its parameters are analytic formulas of numerical simulation. The new model combines numerical analysis and analytical methods with the advantages of high precision, clear concept and small amount of calculation, which is suitable for circuit analysis programs.