使用四圆衍射仪和双晶衍射技术 ,分析了 Si C体单晶的结构和极性 .Si C单晶体由化学气相淀积法获得 .六方 { 10 15 }极图证明了该单晶结构为 6 H型 .三轴晶衍射中的ω模式衍射强度的差异判定了该单晶的 Si终端面和 C终端面 ,即极性面。两个面的一、二、三级衍射强度的测量比值与经过散射因子修正后计算的结构振幅平方比值| F ( 0 0 0 L ) | 2 / | F( 0 0 0 L ) | 2 非常吻合 .因此 ,利用极性面的衍射强度差异 ,可以方便、严格地判断具有类似结构如 2 H{ 0 0 0 1}、4H { 0 0 0 1}及 3C- Si C{ 111}的极性 The structure and polarity of Si C single crystals were analyzed by four-circle diffractometer and twin-crystal diffraction technique.The single-crystal Si C was obtained by chemical vapor deposition.The hexagonal {10 15} pole figure proved that the single crystal structure was 6 Type H. The difference in the diffraction intensity of the mode ω in triaxis diffraction determines the Si terminal and C terminal faces, ie, polar faces, of the single crystal. The measured ratio of the first, second and third order diffraction intensities of the two surfaces is in good agreement with the square of the amplitude of the structure calculated after correction by the scattering factor | F (0 0 0 L) | 2 / | F (0 0 0 L) | 2 Therefore, polarities of similar structures such as 2 H {0 0 0 1}, 4 H {0 0 0 1}, and 3 C-Si C {111} can be easily and strictly judged by utilizing the difference in diffraction intensity of the polar face