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The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K.Device simulation results show that the charge sharing collection increases by 66%-325% when the temperature rises.The LETth of a MBU in two SRAM cells and one DICE cell is also quantified.Besides charge sharing, the circuit response’s temperature dependence also has a significant influence on the LETth.
The temperature dependence of charge sharing in a 130 nm CMOS technology has been investigated over a temperature range of 200 to 420 K. Device simulation results show that the charge sharing collection increases by 66% -325% when the temperature rises. The LETth of a MBU in two SRAM cells and one DICE cell is also quantified .esides charge sharing, the circuit response’s temperature dependence also has a significant influence on the LETth.