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理论分析了温度对垂直腔面发射半导体激光器(VCSEL)工作性能的影响,利用VCSEL的增益-腔模失配理论设计了适用于高温环境下工作的VCSEL外延结构并对该结构进行了外延生长及工艺制备。理论分析表明,采用势垒高度大于0.25eV的量子阱有源区结构可以缓解高温工作时器件的载流子泄漏问题。设计了室温下增益-腔模偏离为11nm的器件结构。理论分析表明,在320K时与器件腔模对应的增益谱波长具有最大的光增益,此时器件具有最小的阈值电流。对分布式布拉格反射镜(DBR)的反射率进行了优化以进一步减小器件阈值电流。采用了一种自平坦化的台面工艺结构制作了7、9、13μm三种不同氧化口径的器件,器件在室温下的阈值电流分别为1.95、2.53、2.9mA,最大出光功率分别为0.31、1.11、1.04mW,并且输出功率的高温稳定性较好。随工作温度的升高,器件阈值电流先减小后变大,在320～330K时器件阈值达到最小值,与理论分析一致。
The influence of temperature on the performance of vertical cavity surface-emitting semiconductor laser (VCSEL) is theoretically analyzed. The VCSEL epitaxial structure suitable for working in high temperature environment is designed by the gain-cavity mismatch theory of VCSEL, and the structure is epitaxially grown Process preparation. Theoretical analysis shows that the quantum well active region structure with barrier height greater than 0.25 eV can alleviate the carrier leakage problem at high temperature. The device structure with gain-mode deviation of 11nm at room temperature was designed. Theoretical analysis shows that the gain spectrum wavelength corresponding to the cavity mode of the device has the maximum optical gain at 320K, and the device has the minimum threshold current. The reflectivity of the distributed Bragg reflector (DBR) is optimized to further reduce the device threshold current. A self-planar mesa structure was used to fabricate three kinds of devices with different oxide diameters of 7, 9 and 13μm. The threshold currents of the devices at room temperature were 1.95, 2.53 and 2.9mA respectively, and the maximum output power was 0.31 and 1.11 respectively , 1.04mW, and the output power of high temperature stability is better. With the increase of operating temperature, the threshold current of the device first decreases and then increases. At 320 ~ 330K, the threshold value of the device reaches its minimum value, which is consistent with the theoretical analysis.