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在电流密度为1136A/cm~2的情况下,考察了直流电场对Al—Cu共晶片间距的影响。实验结果表明,电场使片间距减小。分析表明,这是由以下三个方面的原因引起的:(1)电场使共晶两相中的其中一相在另一相上形核并长大;(2)电场使相转变所需的驱动力减少;(3)电场使层片缺陷可以向片间距减小的方向运动。
At the current density of 1136A / cm ~ 2, the effect of DC electric field on the Al-Cu eutectic spacing was investigated. The experimental results show that the electric field decreases the chip spacing. The analysis shows that this is caused by the following three causes: (1) the electric field causes one of the eutectic phases to nucleate and grow on the other phase; (2) the electric field required for the phase change Driving force to reduce; (3) the electric field so that flaws can be reduced to the chip spacing direction.