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采用稳态温度梯度技术的镓溶液外延已成功地用于生长高质量的150微米厚的砷化镓层,其电子浓度的变化小于5%。使用激光探针的光电导方法精确地测量电子浓度的相对变化。用电子浓度为1.5～2×10~(15)厘米~(-3)的这种外延层,测量了在 X 波段和 K_u 波段的限累振荡,其峰值功率达400瓦,效率高于10%。带有一个阶梯脊波导阻抗变换器的小窗孔电路,输出 X 和K_u 波段的基频限累振荡。在某些二极管中观察到高达20倍阈值的工作偏置电平。解释了与有源层交界处的衬底(或接触)层电导率和有源层趋肤深度对于效率和防止雪崩击穿的重要性。证明和讨论了频率随偏压和温度的调谐。
Gallium solution epitaxy using steady state temperature gradient techniques has been successfully used to grow high quality 150 [mu] m thick gallium arsenide layers with less than 5% variation in electron concentration. Photoconduction methods using laser probes accurately measure the relative change in electron concentration. Using this epitaxial layer with an electron concentration of 1.5-2 × 10-15 cm -3, the limit-of-resonance oscillations in the X-band and the K_u band were measured with a peak power of 400 W and an efficiency of higher than 10% . A small aperture circuit with a ladder-ridged waveguide impedance transformer outputs the fundamental frequency-limited oscillation of the X and K_u bands. Work bias levels up to 20 times the threshold are observed in some diodes. The importance of the substrate (or contact) layer conductivity and the active skin skin depth at the interface with the active layer is explained for efficiency and prevent avalanche breakdown. The frequency tuning with bias and temperature is demonstrated and discussed.