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Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-x As buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation.Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-x As/GaAs structure material.This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures.It also helps study various doping structures and optimize structure designs in the future.
Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1-x As buffer layer are determined in order to effectively measure the body parameters for transmission-mode (t-mode) photocathode materials before Cs-O activation. Body parameters of cathode materials are well fitted through experiments and fitting calculations for the designed AlxGa1-x As / GaAs structure material. This investigation examines photo-excited performance and measurements of body parameters for t-mode cathode materials of different doping structures. It also helps study various doping structures and optimize structures designs in the future.