论文部分内容阅读
利用纳米压痕技术对沉积在Si衬底上1μm厚Cu膜的硬度H和弹性模量E进行了测量.结果表明,由单一刚度测量(SSM)和连续刚度测量(CSM)2种方法测得的E值基本一致.然而由于Cu膜的室温蠕变行为显著,用SSM方法测得薄膜的H值显著小于用CSM方法测得的H值.对加载曲线进行分析表明,在压入深度为528—587 nm时薄膜硬度显示基体效应,压入深度与薄膜厚度的比值与有限元计算结果吻合较好.
The hardness H and elastic modulus E of 1 μm thick Cu film deposited on Si substrate were measured by nanoindentation technique.The results showed that the hardness and elastic modulus of Cu film deposited on Si substrate were measured by two methods: single stiffness measurement (SSM) and continuous stiffness measurement (CSM) However, due to the significant creep behavior of Cu film at room temperature, the H value measured by SSM method was significantly lower than that measured by CSM method.The analysis of loading curve showed that at the depth of 528 The film hardness shows the matrix effect at -587 nm, and the ratio of the depth to thickness is in good agreement with the finite element method.