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绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)在高压大功率场合的应用越来越广泛,但是高压IGBT的器件价格昂贵,低压IGBT由于耐压的限制,在高压大功率电能变换场合还不能满足需求。直接串联使用是一种较好的解决方案。结合IGBT的直接串联驱动需求,从安全隔离、可靠门级钳位、有源电压控制和过流保护等方面进行研究,设计出相应的门极驱动保护单元(gate drive and protection unit,GDU)并将其运用在3 kV/200 A三相逆变系统,结果验证了驱动的可靠性。
Insulated-gate bipolar transistors (IGBTs) are more and more widely used in high-voltage and high-power applications, but high-voltage IGBTs are expensive devices. Due to the voltage limitation of low-voltage IGBTs, Still can not meet the demand. Direct in-line use is a better solution. Based on the demand of direct series driving of IGBT, the gate drive and protection unit (GDU) is designed based on the research of safety isolation, reliable gate clamp, active voltage control and over-current protection Applying it to a 3 kV / 200 A three-phase inverter system, the results verify the reliability of the drive.