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本文综述了 Ｓｉ Ｃ 单晶的物理性质、晶体结构、制备过程以及应用等详细地介绍了大尺寸 Ｓｉ Ｃ 单晶的 Ｐ Ｖ Ｔ 法制备和该过程中的关键要素， 分析了 Ｐ Ｖ Ｔ 法制备的 Ｓｉ Ｃ单晶中所存在的缺陷及其成因
In this paper, the physical properties, crystal structure, preparation and application of Si C single crystal are reviewed. The P V T preparation of large-size Si C single crystal and the key elements in the process are described in detail. Preparation of Si C single crystal defects and their causes