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针对沟槽栅纵向双扩散场效应晶体管(trench-gate MOSFET),提出了一种新型的SPICE模型.通过对沟槽栅MOSFET器件的物理特性及其内在结构分析,建立了漂移区电阻模型.为了准确模拟器件的动态特性,对栅源电容、栅漏电容及源漏电容分别建立了模型.考虑了器件的自热效应、温度效应及击穿特性,建立了自热模型和击穿电压模型,并对模型温度参数进行了修正.通过器件测试结果验证,各参数测试结果和对应模型的仿真结果误差均小于5%.因此,该模型能准确地反映器件的静态和动态特性.
A novel SPICE model is proposed for the trench-gate MOSFET. The drift region resistivity model is established by analyzing the physical properties of the trench-gate MOSFET device and its intrinsic structure. For The models of gate-source capacitance, gate-drain capacitance and source-drain capacitance are established respectively, and the self-heating effect, temperature effect and breakdown characteristic of the device are considered, and the self-heating model and breakdown voltage model are established. The temperature parameters of the model are corrected.The device test results verify that the error of the simulation results between the test results and the corresponding models are less than 5%, so the model can accurately reflect the static and dynamic characteristics of the device.