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经过对GaAs MESFET输出功率及其线性失真的综合分析,提出了无拖尾双峰n~+n载流子浓度分布的最佳设计。用Si离子注入和Be注入埋层方法,以及优化的快速退火技术,满意地制备出所希望的无拖尾双峰n~+n浓度分布。用于DX571功率GaAs MESFET器件时的研究表明,与常规注入分布的器件相比,无拖尾n浓度分布器件在4GHz下测得的1dB增益压缩功率输出增加了0.4W;在输入信号提高50mW情况下增益仍为9dB,漏极效率提高3％,加上n~+注入后饱和压降又下降0.3V,预计其线性输出功率能力将会有进一步改善。
After a comprehensive analysis of the output power and linear distortion of GaAs MESFET, the best design of non-tailing bimodal n ~ + n carrier concentration distribution is proposed. The desired non-tailing bimodal n ~ + n concentration distribution was satisfactorily prepared by Si ion implantation and Be implanting buried layer method, and the optimized rapid annealing technique. Studies with the DX571 power GaAs MESFET device show that the 1 dB gain compressed power output measured at 4 GHz for a non-tailing n concentration distribution device increases by 0.4 W compared to a normal injection-distribution device; at a 50 mW increase in the input signal Under the gain is still 9dB, the drain efficiency increased by 3%, coupled with n ~ + injection saturation voltage drop dropped by 0.3V, the linear output power capability is expected to be further improved.