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Hydrogenated nanocrystalline silicon thin films were fabricated from SiH_4 with H_2dilution at a low substrate temperature of 200℃ by the conventional plasma enhanced chemicalvapor deposition technique.A high deposition rate over 0.75 nm/s can be achieved.Ramanscattering spectral measurements revealed that the crystalline fraction and grain size increasedwith the increase in hydrogen dilution ratio.Fourier transform infrared spectrum measurementsshowed that the hydrogen content decreased and the Si-H bonding configuration changed mainlyfrom SiH to SiH_2 with the increase in hydrogen dilution ratio.This suggested that the hydrogendilution played an important role in the low-temperature growth of nanocrystalline silicon thinfilm.The growth mechanism is discussed in terms of a surface diffusion model and hydrogenetching effects.
Hydrogenated nanocrystalline silicon thin films were fabricated from SiH_4 with H_2dilution at a low substrate temperature of 200 ° C by the conventional plasma enhanced chemical vapor deposition technique. A high deposition rate over 0.75 nm / s can be achieved. Ramanscattering spectral measurements revealed that the crystalline fraction and grain size increased with the increase in hydrogen dilution ratio. Fourier transform infrared spectrum measurementsshowed that the hydrogen content decreased and the Si-H bonding configuration changed primarilyfrom SiH to SiH_2 with the increase in hydrogen dilution ratio. This suggested that the hydrogendilution played an important role in the low-temperature growth of nanocrystalline silicon thinfilm. The growth mechanism is discussed in terms of a surface diffusion model and hydrogenetching effects.