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采用共晶连接与表面预共晶法连接相比较的方法,对单晶硅连接进行了实验研究和理论分析。结果表明,在保温30min的条件下,共晶连接与表面预共晶法实现可靠连接的最低温度分别为600与430℃。热力学分析表明,共晶连接过程中,连接界面区域Au、Si向Au或Si基过饱和固溶体转变是共晶液相形成的主要阻力;表面预共晶法连接前,单晶硅待连接面上预制了Au-Si共晶熔敷层,且熔敷层内及其与单晶硅界面区域存在因Au、Si相分离不完全而产生的过饱和固溶体,因此,连接过程中Au-Si的二次共晶液化不存在上述阻力,且获得了过饱和固溶体向共晶液相转变时体系吉布斯自由能减小的动力,所以,二次共晶液相更易产生,连接温度有效降低。
The eutectic connection and the surface pre-eutectic method are compared to the experimental study and theoretical analysis of the single-crystal silicon connection. The results show that the minimum temperatures for the eutectic connection and the surface pre-eutectic method to achieve a reliable connection are 600 and 430 ℃, respectively, for 30min. The thermodynamic analysis shows that the transformation of Au and Si into Au or Si-based supersaturated solid solution during the eutectic connection is the main resistance to the eutectic liquid phase formation. Before the surface pre-eutectic process, the surface of monocrystalline silicon to be connected Au-Si eutectic cladding layer is prefabricated, and there is supersaturated solid solution in Au-Si eutectic cladding layer and its interface with monocrystalline silicon due to the incomplete separation of Au and Si phases. Therefore, the Au The existence of the above-mentioned resistance does not exist in the sub-eutectic liquefaction, and the Gibbs free energy of the system when the supersaturated solid solution is transformed into the eutectic liquid phase is decreased. Therefore, the secondary eutectic liquid phase is easier to produce and the connection temperature is effectively reduced.