为深入研究单粒子效应的微观机制,使得在抗辐射加固芯片的设计中更具有针对性,采用束流直径与芯片特征尺度相当的重离子微束进行地面模拟研究是最有效的手段之一。随着集成电路工艺技术的不断进步,器件的特征尺寸越来越小,工艺的进步对设计方法学提出了新的挑战,需要更小 In order to further study the microscopic mechanism of single-particle effect, it makes the design of radiation-hardened chip more pertinent. It is one of the most effective methods to simulate the ground using heavy ion beam with beam diameter and chip characteristic scale. With the continuous improvement of integrated circuit technology, the feature size of the device is getting smaller and smaller, the progress of the process poses new challenges to the design methodology and needs to be smaller