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用PLD方法在铂金硅衬底制作了高质量的SrBi2Ta2O9 (SBT)铁电薄膜样品.在 10到 300K的低温范围,研究了SBT薄膜的电子输运特性,分析了其传导机制.结果显示在SBT铁电薄膜中存在两种导电机制.根据SBT层状结构,两种导电机制分为: 被限制在Bi O层内的内输运,和能够穿过Bi O层的外输运.首次观察到作为内传导载流子的铁电极化子的电输运行为.在SBT薄膜中铁电极化子的热激活能Ea~ 0. 0556eV.研究结果为SBT薄膜具有极低漏电流提供了一种解释.
High-quality SrBi2Ta2O9 (SBT) ferroelectric thin film samples were fabricated on platinum substrate by PLD method.The electron transport properties of SBT thin films were investigated at low temperature ranging from 10K to 300K, and the conduction mechanism was analyzed.The results show that in SBT There are two kinds of conductive mechanisms in the ferroelectric thin film.According to the SBT layered structure, the two conductive mechanisms are divided into: internal transport limited within the BiO layer and external transport capable of passing through the BiO layer.Firstly observed The electron transport behavior of the ferroelectric polarizable carriers as internal conduction carriers The thermal activation energy of the ferroelectrodes in the SBT thin film Ea ~ 0.0556eV. The results provide an explanation for the very low leakage current of SBT thin films.