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报道了以Si( 111)为衬底的GaN光导型紫外探测器的制备及其光电流性质。探测器的光谱响应表明 ,这种GaN探测器在紫外波段 2 50～ 360nm有近于平坦的光电流响应 ,363nm附近有陡峭的截止边。在 357nm波长处 ,测得 5V偏压下的响应度高达 6.9A/W。响应度随外加偏压的增加而增加 ,5V时达到饱和。通过拟合光电流响应随入射光调制频率的变化关系 ,得到GaN探测器的响应时间为 4 .8ms。
The preparation and photocurrent properties of Si (111) -based GaN photoconductive UV detectors were reported. The spectral response of the detector shows that this GaN detector has a near-flat photocurrent response at 250-360 nm in the UV range and a steep cutoff near 363 nm. At 357nm wavelength, the response at 5V bias is measured up to 6.9A / W. Responsiveness increases with increasing bias and reaches saturation at 5V. By fitting the relationship between the photocurrent response and the modulation frequency of the incident light, the response time of the GaN detector is 4.8 ms.