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利用注入离子在固体中传输理论和辐照增强扩散理论建立了金属离子高温注入金属Al靶的传质模型,计算了金属离子高温注入的浓度-深度分布.在所建立的传质模型中采用动态Monte Carlo方法模拟离子注入过程,引入饱和浓度限模拟晶体靶局部饱和现象;采用基于辐照增强扩散的扩散方程描述注入粒子扩散过程;根据缺陷线性退火理论确定辐照增强扩散系数;结合杂质原子和非平衡空位扩散方程给出了注入粒子的浓度分布;在扩散方程中引入了空位源函数并考虑了离子溅射造成的表面退让效应.针对离子能量140keV,注入剂量2×10~(17)cm~(-2),温度250,400和510℃的Cr离子注入Al靶计算得到的浓度-深度分布与实验结果相符.
The mass transfer model of metal Al target implanted with metal ions at high temperature was established by using the transfer theory of implanted ions in solid and the theory of enhanced diffusion by radiation. The concentration-depth distribution of metal ion implanted at high temperature was calculated. In the established mass transfer model, Monte Carlo method was used to simulate the ion implantation process. The saturation concentration was introduced to simulate the local saturation phenomenon of crystal targets. The diffusion equation based on enhanced diffusion was used to describe the diffusion process of implanted particles. The diffusion-enhanced diffusion coefficient was determined according to the defect annealing theory. The unbalance vacancy diffusion equation gives the concentration distribution of the implanted particles. Introducing the vacancy source function into the diffusion equation and taking into account the effect of surface consolation caused by ion sputtering, the ion implantation energy is 140 keV and the implantation dose is 2 × 10 ~ (17) cm ~ (-2) at 250, 400 and 510 ℃, respectively. The concentration-depth distribution calculated by Cr ion implantation into Al target is consistent with the experimental results.