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在室温下使用过滤阴极真空电弧系统在多孔硅表面沉积大约10纳米左右厚度的铜、铝和钛薄膜,并且在真空下800度退火10分钟。多孔硅层是通过电化学腐蚀硅制得。X射线光电子谱、荧光谱,光吸收谱和X射线衍射谱的研究表明退火后,沉积铜和钛的样品出现明显的光吸收红移和硅2p电子能级移动。这是由于在多孔硅表面形成铜和钛的硅化物而引起的晶体场和电子传输变化所造成的。
A Filtered Cathodic Vacuum Arc System was used at room temperature to deposit thin films of copper, aluminum and titanium about 10 nanometers thick on the surface of porous silicon and annealed at 800 degrees under vacuum for 10 minutes. Porous silicon layers are made by electrochemical etching of silicon. X-ray photoelectron spectroscopy, fluorescence spectroscopy, optical absorption spectroscopy and X-ray diffraction spectroscopy study showed that copper and titanium deposited samples showed obvious red shift of light absorption and silicon 2p electron level shift after annealing. This is due to changes in the crystal field and electron transport caused by the formation of silicides of copper and titanium on the surface of porous silicon.