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通过数值方法求解泊松方程和薛定谔方程的自洽解,提出了考虑量子效应时不同于经典理论的阈值条件,并得出了精确的一维阈值电压模型,模拟结果与实验十分符合.在此基础上,基于准二维泊松方程,通过考虑短沟道效应和量子效应,建立了较为精确的适合于小尺寸MOSFET的量子修正阈值电压模型,模型同样适用于(超)深亚微米高k栅介质MOSFET电特性的模拟和结构参数的设计.
By solving the self-consistent solutions of the Poisson’s equation and the Schrödinger’s equation by numerical method, the threshold condition different from the classical theory when considering the quantum effect is proposed and an accurate one-dimensional threshold voltage model is obtained. The simulation results are in good agreement with the experiments Based on the quasi-two-dimensional Poisson’s equation, the quasi-two-dimensional Poisson equation is adopted to establish a more accurate quantum correction threshold voltage model suitable for small-size MOSFETs by considering the short channel effect and quantum effect. The model is also applicable to (sub) Simulation of Gate Dielectric MOSFET Electrical Characteristics and Design of Structure Parameters.