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本文研究用等离子体增强化学气相淀积（ＰＥＣＶＤ）方法淀积ＳｉＯ２和非晶硅（ａ－Ｓｉ）时淀积速率和薄膜折射率与淀积条件的关系．选择合适的淀积条件制备了ａ－Ｓｉ／ＳｉＯ２多量子阱结构材料．用激光扫描退火方法使其晶化，当ａ－Ｓｉ和ＳｉＯ２层厚度分别为４ｎｍ和６ｎｍ时，形成了颗粒大小为３．８ｎｍ的硅晶粒．晶化后的样品在１０Ｋ下可以观察到较强的光荧光发射，三个峰值波长分别为８１０、８２５和８４５ｎｍ．
In this paper, the relationship between the deposition rate, the refractive index and deposition conditions of SiO2 and amorphous silicon (a-Si) deposited by plasma enhanced chemical vapor deposition (PECVD) is studied. A-Si / SiO2 multi-quantum well structure material was prepared by choosing appropriate deposition conditions. Crystallization was carried out by laser scanning annealing. When the thickness of the a-Si and SiO2 layers was 4 nm and 6 nm, respectively, silicon grains having a grain size of 3.8 nm were formed. The crystallized samples can observe strong fluorescence emission at 10K, the three peak wavelengths are 810, 825 and 845nm, respectively.