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采用Ga2O3/GaN、Ga2O3和GaN三种镓源,通过化学气相沉积(CVD)法,在镀有Ni催化剂的Si(100)基片上制备了GaN纳米线,使用SEM、XRD、EDS、HRTEM和PL对样品的形貌、结构、成分和发光性能进行了表征,研究了镓源与基片距离(生长温度)及催化剂种类对纳米线生长的影响。结果表明,相对于Ga2O3和GaN单一镓源,采用Ga2O3/GaN混合镓源制备出的纳米线表面更加光滑,结晶度更高。此外,GaN纳米线的最佳制备工艺参数为:氨气流量0.03 L/min,催化剂Ni,镓源与基片距离11 cm(生长温度950℃)。
GaN nanowires were prepared on Si (100) substrates plated with Ni catalyst by chemical vapor deposition (CVD) using Ga2O3 / GaN, Ga2O3 and GaN sources. SEM, XRD, EDS, HRTEM and PL The morphology, structure, composition and luminescent properties of the samples were characterized. The effects of the distance between gallium source and the substrate (growth temperature) and the type of catalyst on the growth of nanowires were studied. The results show that the surface of nanowires prepared with Ga2O3 / GaN mixed gallium source is smoother and higher crystallinity than Ga2O3 and GaN single gallium source. In addition, the optimum preparation parameters of GaN nanowires are as follows: ammonia flow rate 0.03 L / min, catalyst Ni, distance between gallium source and substrate 11 cm (growth temperature 950 ℃).