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1 IntroductionrnTokyo Electron Limited has already released CVD Ti/TiN system for contact and capacitor electrode application. This system has been selected among many DRAM customers due to its excellent filling performance. In future generation, low temperature process (＜450℃) would be needed under the requirement of capacitor dielectric material change by DRAM cell size shrink, and to extend for logic and e-DRAM application (Figure 1). In this paper, CVD Ti/TiN system and current status of low temperature process development are presented.rn