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在Kayex CG6000单晶炉上采用优化的350 mm密闭式热场,在23~25 r/min高晶转下用直拉法拉制出了Φ76.2~125 mm、n型高阻<111>晶向Si单晶,单晶的外形和径向电阻率均匀性良好。对<111>晶向Si单晶在高晶转下生长容易出现扭曲变形、棱面较宽现象的原因进行了分析。通过添加热屏,加强热场的保温和热屏的隔热作用,及缩小等径生长阶段熔Si液面与热屏间的距离,提高了晶体结晶前沿的温度梯度。从而避免了<111>晶向Si单晶的扭曲变形,减小了单晶棱面宽度,同时有利于消除晶体的漩涡缺陷。
Optimized 350 mm hermetically sealed thermal field was used on the Kayex CG6000 single crystal furnace. Φ76.2 ~ 125 mm and n-type high resistance <111> crystal were produced by Czochralski method at 23-25 r / min Si single crystal, single crystal shape and radial resistivity uniformity is good. The reason why the growth of the <111> crystal Si single crystal at high crystal growth is prone to distortion and widened facets is analyzed. The temperature gradient of crystal front is increased by adding thermal screen to enhance the insulation of thermal field and thermal screen, and to reduce the distance between the surface of molten silicon and thermal screen during the same growth stage. Thereby avoiding the distortion of the <111> crystal to Si single crystal, reducing the width of the single crystal facet, and at the same time, eliminating the vortex defect of the crystal.