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影响直接外延生长氧化物薄膜的因素有很多，最主要的是保证氧化物薄膜的正确成相和在单晶衬底上成核．直接外延生长时，衬底温度影响到薄膜的成相．衬底温度还影响薄膜的生长动力学，并因此影响薄膜的外延生长取向．由于薄膜是首先在衬底表面成核、成相并生长的，因此衬底材料晶格的影响是不容忽视的．衬底材料（或异质外延材料）与薄膜的相互作用是影响外延生长的最直接因素，而晶格常数失配会造成薄膜样品中存在应力并影响样品性质．利用脉冲激光淀积法，我们成功地外延生长了ＹＢａ２Ｃｕ３Ｏ７超导薄膜、Ｓｒ０．５Ｂａ０．５ＴｉＯ３铁电介电薄膜、Ｌａ０．７Ｃａ０．３ＭｎＯ３铁磁巨磁电阻薄膜、Ｌａ０．５Ｓｒ０．５ＣｏＯ３导电薄膜等多种具有钙钛矿结构的氧化物功能薄膜．以这些钙钛矿结构氧化物薄膜的外延生长为例，本文讨论影响氧化物薄膜异质外延生长的因素
There are many factors that affect the direct epitaxial growth of oxide films. The most important thing is to ensure the correct phase formation of the oxide films and nucleation on the single crystal substrate. Direct epitaxial growth, the substrate temperature affects the film phase. The substrate temperature also affects the growth kinetics of the film and therefore affects the epitaxial growth orientation of the film. As the film is the first in the substrate surface nucleation, phase and growth, so the substrate material lattice can not be ignored. The interaction between the substrate material (or heteroepitaxial material) and the thin film is the most direct factor affecting the epitaxial growth, and the lattice parameter mismatch will cause the stress in the thin film sample and affect the sample properties. Using pulsed laser deposition, we successfully epitaxially grown YBa2Cu3O7 superconducting thin films, Sr0.5Ba0.5TiO3 ferroelectric dielectric films, La0.7Ca0.3MnO3 ferromagnetic giant magnetoresistive films, La0.5Sr0.5CoO3 conductive films and so on A variety of oxide functional films with perovskite structure. Taking the epitaxial growth of these perovskite-structure oxide films as an example, the factors that affect the heteroepitaxial growth of oxide films are discussed in this paper