We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO(AZO)/n-type oxide semiconductor/p-type Cu_2O heterojuncti
A following of diverse degradation indicators during the ageing in operational conditions of AlGa N/Ga N HEMTs(high electron mobility transistors) is proposed.
We have investigated the performance of a spin transfer torque random access memory(STT-RAM)cell with a cross shaped Heusler compound based free layer using mic