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应变超薄层结构的组分、厚度、应变状态的直接检测，对于器件应用具有重要的意义，本文中，利用ＭＯＣＶＤ方法得到高质量的ＩｎＧａＡｓ／ＧａＡｓ量子阱材料，采用双晶衍射方法的弱信号收集技术，结合运动学理论模拟，得出同时包含几个不同阱宽的ＩｎＧａＡｓ／ＧａＡｓ量子阶结构的重要参数，其检测结果与光致发光（ＰＬ）、透射电子显微镜（ＴＥＭ）等方法的测试结果基本一致，表明Ｘ射线双晶衍射方法是检测超薄层应变量子阱结构的一个有效方法．
In this paper, the high quality InGaAs / GaAs quantum well material is obtained by the MOCVD method, and the weak signal of the double crystal diffraction method is used to directly detect the composition, thickness and strain state of the strained ultrathin layer structure. The key parameters of InGaAs / GaAs quantum structures containing several wells with different well widths are obtained by simulation and kinematic simulation. The results are in good agreement with those of PL and TEM. The results are basically the same, indicating that the X-ray double crystal diffraction method is to detect ultra-thin layer strained quantum well structure is an effective method.