论文部分内容阅读
文中描述了用MeV级质子的背散射测定单晶Si薄膜的厚度、厚度均匀性及膜的表面沾污,用质子沟道效应确定了膜的单晶完整程度及表面沾污对膜沟道特性的影响.
In this paper, the thickness, thickness uniformity and film surface contamination of single crystal Si films were measured by backscattering of MeV grade protons. The complete degree of single crystal and the influence of surface contamination on the film channel properties Impact.