论文部分内容阅读
研究了 2 .5 nm超薄栅短沟 p MOSFETs在 Vg=Vd/ 2应力模式下的热载流子退化机制及寿命预测模型 .栅电流由四部分组成 :直接隧穿电流、沟道热空穴、一次碰撞电离产生的电子注入、二次碰撞电离产生的空穴注入 .器件退化主要是由一次碰撞产生的电子和二次碰撞产生的空穴复合引起 .假设器件寿命反比于能够越过 Si- Si O2 界面势垒的二次碰撞产生的二次空穴数目 ,在此基础上提出了一个新的模型并在实验中得到验证 .
The hot carriers degradation mechanism and lifetime prediction model of 2.5 nm ultrathin gate-short p-type MOSFET under Vg = Vd / 2 stress mode are studied. The gate current consists of four parts: direct tunneling current, Holes, electron injection by one-shot ionization, and hole-injection by second-order ionization The device degradation is mainly caused by the recombination of electrons generated by one collision and holes recombined by the second collision Assuming that the device lifetime is inversely proportional to the number of holes that can cross the Si- Si O2 interface barrier secondary collision generated by the number of secondary holes, on this basis proposed a new model and verified in the experiment.