We choose a Si/Ge interface as a research object to investigate the influence of interface disorder on thermal boundary conductance.In the calculations,the diffuse mismatch model is used to study thermal boundary conductance between two non-metallic materials,while the phonon dispersion relationship is calculated by the first-principles density functional perturbation theory.The results show that interface disorder limits thermal transport.The increase of atomic spacing at the interface results in weakly coupled interfaces and a decrease in the thermal boundary conductance.This approach shows a simplistic method to investigate the relationship between microstructure and thermal conductivity.It is well known that interfaces can play a dominant role in the overall thermal transport characteristics of structures whose length scale is less than the phonon mean free path.When heat flows across an interface between two different materials,there exists a temperature jump at the interface.Thermal boundary conductance (TBC),which describes the efficiency of heat flow at material interfaces,plays an importance role in the transport of thermal energy in nanometerscale devices,semiconductor superlattices,thin film multilayers and nanocrystalline materials.[1]