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给出了δ掺杂的半导体定义,论述了这种掺杂的特点、方法、材料的能带结构及影响δ掺杂分布宽度的因素,同时介绍了在此技术基础上改进或发展地一些新颖半导体器件.
The definition of δ-doping semiconductor is given. The characteristics of the doping, the band structure of the material and the factors influencing the width of δ-doping distribution are discussed. At the same time, new and improved methods based on this technique are introduced Semiconductor device.